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| Growth Method | Vertical Gradient Freezing | |||
| Conduction Type (Dopant) |
N-type：Si | |||
| Carrier Concentration |
N-type 0.5-4×1018 cm-3 (Can be specified within this range) |
|||
| Dislocation Density (EPD) |
(Average) Typical Grade <500cm-2 (Maximum) Typical Grade <2000cm-2 |
|||
| Size | φ4" | φ3" | φ2" | |
| Orientation | 1. (100)±0.1° 2. (100) off α°±0.1° towards (011) or (01-1) etc. 3. Customer's request |
|||
| Diameter | (mm) | 100.0±0.1 | 76.0±0.1 76.2±0.1 |
50.0±0.1 50.8±0.1 |
| Thickness | (μm) | 450-625 ±15 |
350-600 ±15 |
300-450 ±15 |
| Orientation Flat |
(mm) | Cleaved Primary Flat is available on request | ||
|
Length |
32.5±1.0 18.0±1.0 |
22.0±1.0 12.0±1.0 |
16.0±1.0 8.0±1.0 |
|
| Location （Primary） （Secondary） |
EJ (Dove-Tail)、(0-1-1)±0.5°*、(0-11)±0.5°
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| Edge Rounding | Bevelled | |||
| Flatness | TTV(μm) Warp（μm) |
<5.0 <10.0 |
<5.0 <10.0 |
<5.0 |
| Surface Finish |
Front | Mirror | ||
| Back | Lapped and etched | |||
| Mirror is available on request | ||||
| Surface Treatment | Epi-ready | |||
| Laser Marking | Option | |||
| Packing | Fluoroware individual container | |||
|
| Growth Method | Vertical Gradient Freezing | |||
| Conduction Type (Dopant) |
N-type：Si | |||
| Carrier Concentration |
N-type 0.5-4×1018 cm-3 (Can be specified within this range) |
|||
| Dislocation Density (EPD) | (Maximum) Typical Grade <5000cm-2 | |||
| Size | φ4" | φ3" | φ2" | |
| Orientation | 1. (100)±0.1° 2. (100) off α°±0.1° towards (011) or (01-1) etc. 3. Customer's request |
|||
| Diameter | (mm) | 100.0±0.2 | 76.0±0.2 76.2±0.2 |
50.0±0.2 50.8±0.2 |
| Thickness | (μm) | 350-625 ±20 |
300-600 ±20 |
250-350 ±20 |
| Orientation Flat |
(mm) | |||
|
Length |
32.5±1.0 18.0±1.0 |
22.0±1.0 12.0±1.0 |
16.0±1.0 8.0±1.0 |
|
| Location （Primary） （Secondary） |
EJ (Dove-Tail)、(0-1-1)±0.5°*、(0-11)±0.5°
|
|||
| Edge Rounding | Bevelled | |||
| Flatness | TTV(μm) Warp（μm) |
<10.0 <15.0 |
<10.0 <15.0 |
<10.0 |
| Surface Finish |
Front | Mirror | ||
| Back | Lapped and etched | |||
| Surface Treatment | Epi-ready is available on request | |||
| Laser Marking | Option | |||
| Packing | 25 wafers box or Fluoroware individual container | |||
|
| Growth Method | Liquid Encapsulated Czochralski | |||
| Conduction Type (Dopant) | Semi-Insulating type : (Undoped (C-doped)) | |||
| Resistivity (at 25 degree C) | 1-5×107 Ω cm Higher resistivity range is available on request |
|||
| Dislocation Density (EPD) | (Average) <105 cm-2 | |||
| Size | φ4" | φ3" | φ2" | |
| Orientation | 1. (100)±0.1° 2. (100) off 2°±0.1° towards (110) 3. Customer's request |
|||
| Diameter | (mm) | 100.0±0.1 |
76.0±0.1 76.2±0.1 |
50.0±0.1 50.8±0.1 |
| Thickness | (μm) | 450-625 ±15 |
350-625 ±15 |
300-450 ±15 |
| Orientation Flat |
(mm) | |||
|
Length |
32.5±1.0 18.0±1.0 |
22.0±1.0 12.0±1.0 |
16.0±1.0 8.0±1.0 |
|
| Location （Primary） （Secondary） |
EJ (Dove-Tail) (0-1-1)±0.5° (0-11)±0.5° |
|||
| Edge Rounding | Bevelled | |||
| Flatness | TTV(μm) TIR(μm) Warp（μm) LTV（μm) * |
<3.0 <3.0 <5.0 <1.0 15 × 15 mm |
<3.0 |
<5.0 |
| Surface Finish | Front | Mirror | ||
| Back | Mirror Lapped and etched | |||
| Surface Treatment | Epi-ready is available on request for MOCVD and MBE | |||
| Laser Marking | Option | |||
| Packing | 25 wafers box or Fluoroware individual container | |||
|
